Global molecular beam epitaxy system market is expected to grow at high digits CAGR during the forecasted period and its applications are rising enormously across the globe. Molecular Beam Epitaxy (MBE) is an atomic layer by atomic layer crystal growth technique, based on reaction of molecular or atomic beams with a heated crystalline substrate, performed in an ultra-high vacuum (UHV) environment. The technique is exclusively used for the development of very high purity III-V semiconductors where the thickness of layers can be measured with sub-monolayer accuracy. The system contains six solid source effusion cells and 2 RF plasma gas sources.
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